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汪炼成
个人简介

汪炼成,男,籍贯湖南,中国科学院大学,中国科学院半导体研究所物理电子学博士,中南大学特聘教授,博士生导师。

先后在中科院半导体研究所, 新加坡南洋理工大学,新加坡科技大学,新加坡国立大学和英国谢菲尔德大学从事博士和博士后研究工作,是明德之星科技(北京)、明德优视科技公司的创始人和首席科学家,科研方向为半导体光电子器件系统,在面向发光、色彩、图象、显示应用的氮化物LED 器件制造,金属等离激元色彩打印,激光投影显示系统和氮化物材料生长方面有近10年的科研经历, 参与国家863计划, 基金委,新加坡国家基金会(NRF)和英国工程与物理科学研究理事会项目(EPSRC)等多项项目。

迄今已在国际学术期刊,如ACS Photonics, Nano Energy, Appl. Phys. Lett.等发表学术论文60 余篇,被Nature Materials Review 等期刊引用,总引用次数约500 余次;申请专利24 项,授权专利13 项。目前是IEEE 会员,多个国际期刊, 如 Nanoscale, Nano Energy 等的审稿人。工作多次被行业媒体如Compound Semiconductor, Semiconductor Today 报道。

教育工作经历

ü07.2017-现今 特聘教授,博士生导师,中南大学机电工程学院

ü01.2016-07.2017 博士后研究员, 英国谢菲尔德大学氮化物材料与器件中心, EPSRC 英国国家III-V族半导体研发中心

ü04.2015-12.2015 博士后研究科学家,新加坡科技与设计大学工程产品研究中心,新加坡科技-麻省理工学院联合设计中心, 新加坡国立大学先进二维材料&石墨烯材料与器件研发中心

ü07.2013-04.2015 博士后研究员,新加坡南洋理工大学电力与电子工程系,卓越半导体发光与显示中心

ü09.2008-07.2013 博士, 中国科学院大学,中国科学院半导体研究所,中国科学院半导体照明中心

ü09.2004–07.2008 学士, 中南大学材料科学与工程学院

研究兴趣和研究方向

1. 宽禁带半导体(III-氮化物) 光电器件; 2. 微纳光学和光电子器件系统;新型光电显示功能组件和系统; 3.微纳制造技术与装备;4.生物传感器件。欢迎对纳米科技、微系统、微加工、光电显示,光电功能器件等方向感兴趣的同学加入,专业背景可为物理,光学工程,光电子微电子,力学,化学,计算机,机械工程,材料等。课题组与国内外众多课题组有深入合作关系, 加入课题组的学生将有机会和国内外研究机构,如中科院半导体所,清华大学,新加坡科技大学以及业界公司等深入合作, 联合培养等机会,将为组内同学提供充足的工资绩效, 生活补贴,竭诚争取,努力创造良好的工作环境和科研条件, 深造机会等。

联系方式

邮箱:liancheng_wang@csu.edu.cn; wanglc@semi.ac.cn.

办公室:中南大学新校区机电工程学院 (中铝科技大楼) A-510.

电话:18008497660.

微信: 271949769.

代表论文

2017

45. S. T. Wu, Liancheng Wang, X. Y. Yi, Z. Q. Liu, T. B. Wei, G. D.Yuan, J. X. Wang, J. M. Li, Ultrafast Growth of Horizontal GaN Nanowires by HVPE through Flipping the Substrate, Nano Letters. 2017.

44. S. T. Wu, Liancheng Wang, X. Y. Yi, Z. Q. Liu, T. B. Wei, G. D.Yuan, J. X. Wang, J. M. Li, Influence of lateral growth on optical properties of GaN nanowires grown by VLS-HVPE, J. Appl.Phys. 2017, DOI: 10.1063/1.4998485.

43. Liancheng Wang*, Y. Y. Zhang, R. Chen, Z. Q. Liu, J. Ma, Z. Li, X. Y. Yi, H. J. Li, J. X. Wang, G. H. Wang, W. H. Zhu, J. M.Li, Optically-pumped lasing with Q-factor exceeding 6000 from Wet-etched GaN Micro-pyramids, Opt. Lett., 2017, 42, 15, 2976.

42. Liancheng Wang, Z.Li, Z.Liu, Y.Zhang, H.Li, X.Yi, J.Wang, G.Wang, J.Li, Nanostructure Nitride Light Emitting Diodes via Talbot Effect using Improved Colloidal Photolithography, Nanoscale, 2017, 9, 7021.

41. Y. Y Zhang, P. Li, A. Dehzangi, Liancheng Wang, H. Li, X.Yi and G. Wang, Optically-pumped Single-mode Deep-ultraviolet Microdisk Lasers with AlGaN-based Multiple Quantum Wells on Si Substrate, IEEE Photonics Journal, Vol. 9, No. 5, October 2017, 2400508.

Before 2017

40. Liancheng Wang, RJH Ng, Safari Dinachali, M Jalali, Y Yu, JKW Yang*, Large Area Plasmonic Color Palettes with Expanded Gamut Using Colloidal Self-Assembly, ACS Photonics 3 (4), 627-633, 2016. Plasmonic color via Nanosphere lithography.

39. Liancheng Wang, Z Liu, X Yi, Y Zhang, H Li, J Li, G Wang, Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic-electric Fano resonances, J. Appl. Phys. 119 (17), 173106, 2016. Plasmonic Modes Theoretical Analysis.

38. Liancheng Wang*, Z Liu, ZH Zhang, YD Tian, X Yi, J Wang, J Li, G Wang, Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure, J. Appl.Phys.119(14), 143105, 2016. Graphene-(GaN/InGaN)n Interface Analysis.

37. Liancheng Wang*, Y. Cheng, Z. Liu, X. Yi, H. Zhu, G. Wang, Hybrid tunnel junction-graphene transparent conductive electrodes for nitride lateral light Emitting Diodes, ACS Applied Materials & Interface, 2016, 8, 1176−1183. DOI: 10.1021/acsami.5b09419. Graphene transparent conductive electrodes for LEDs.

36. Liancheng Wang*, E. Guo, Z. Liu, X. Yi, G. Wang, High Performance Nitride Vertical Light Emitting Diodes based on Cu Electroplating Technical route, IEEE Transaction on Electron Devices, 63, 3, 2016. 10.1109/TED.2016.2520393. Vertical structure LEDs Fabrication.

35. Liancheng Wang*, Z-H. Zhang, N. Wang, Current crowding phenomenon: Theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model, IEEE J. Quantum Electronics, 51, 5(2015). Current Diffusion Analysis.

34. Liancheng Wang, W. Liu, Y. Zhang, Z-H. Zhang, S.T.Tan, X. Yi, G. Wang*, X. Sun*, H. Zhu*, H.V. Demir*, Graphene transparent conductive electrodes in GaN-based light emitting diodes: Challenges and Countermeasures, Nano Energy (2015) 12, 419–436. Graphene Transparent Conductive Electrodes in GaN LEDs review.

33. Liancheng Wang, Y. Zhang, X. Li, Z. Liu, E. Guo, X. Yi, J. Wang, H. Zhu*, G. Wang, Partially-sandwiched Multi-layer Graphene used as Transparent Conductive Layer for InGaN-based Vertical Light Emitting Diodes, Appl. Phys. Lett. 101, 061102 (2012).【covered by Semiconductor Today(27 August 2012)】 Graphene Transparent Conductive Electrodes for VLEDs.

32. Liancheng Wang, J. Ma, Z. Liu, X. Yi*, H. Zhu*, G. Wang, In-situ fabrication of bendable hexagonal pyramids array vertical light emitting diodes with graphene as interconnected transparent conductive layer. ACS Photonics 2014, 1, 421−429. Bendable VLEDs Fabrication.

31. Liancheng Wang*, Z. Liu, E. Guo, H. Yang, X. Yi*, G. Wang, Interface and transport properties of metallization contacts to wet etching roughed and un-roughed N-polar n-type GaN, ACS Applied Materials & Interfaces 2013, 5 (12), 5797-803. Metal/N-polar GaN contact investigation for VLEDs.

30. Liancheng Wang, Y. Zhang, X. Li, Z. Liu, E. Guo, X. Yi, J. Wang, H. Zhu* G.Wang, Interface and transport properties of GaN/graphene junction InGaN-based LEDs, J. Phys. D: Appl. Phys. 45 (2012) 505102. GaN/graphene Contact.

29. Liancheng Wang, Y. Zhang, X. Li, E. Guo, Z. Liu, X. Yi*, H. Zhu*, G. Wang, Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping, RSC Adv., 2013, 3, 3359. GaN/graphene Contact.

28. Liancheng Wang, Y. Zhang, X. Li, E. Guo, Z. Liu, X. Yi*, H. Zhu*,G. Wang, InGaN-based vertical light emitting diodes with HNO3 modified-graphene transparent conductive layer and high reflective membrane current blocking layer, Proc. R. Soc. A 469: 20120652 (2013). Graphene TCEs for VLEDs.

27. Liancheng Wang*, Z. Liu, Y. Zhang, H. Zheng,H. Xie, H. Yang, X. Yi*, G.Wang, Mechanism in Thermal Stress aided Electrodeless Etching of GaN Epitaxial on Sapphire and approaches to vertical devices, RSC Adv., 2013,3, 10934-10943. Chemical etching for sapphire removal towards VLEDs.

26. Liancheng Wang*, J. Ma, Z. Liu, X. Yi*, G. Wang, N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array. J. Appl. Phys. 2013, 10, 114 (133101). N-polar GaN chemical etching towards micro VLEDs.

25. Liancheng Wang, J. Ma (Joint first author), Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi*, G. Wang, J. Li, Hexagonal Pyramids Array micro vertical Light Emitting Diodes by N-polar Wet Etching, Optics Express, 21, 3, 3457 (2013). MicroVLEDs Fabrication.

24. T. Tian, Liancheng Wang*, T. Zhan, J. Guo, X. Yi*, Z. Liu, J. Li, and G. Wang, Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%), J. Phys. D Appl. Phys. 47 (2014)115102.

23. Liancheng Wang*, G. Enqing, Liu. Zhiqiang, Yi Xiaoyan, Wang Guohong. Electrical characteristics of vertical light emitting diode with n-type contact on a selectively wet-etching roughed surface. J. Semiconductors. vol.32, no.2 (2011).

22. B.Xu, L.Jiu, Y. Gong, Y.Zhang, Liancheng Wang, J.Bai, T.Wang, Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire, AIP Advances, 7 (4), 045009, 2017.

21. P. Li, H. Li*, Liancheng Wang, Z. H. Zhang, J. Kang, Z. Li, Z. Q. Liu, X. Yi, J. Li, G. Wang, High efficiency and low droop of 400 nm InGaN near-ultraviolet light-emitting diodes through suppressed leakage current, IEEE J. Quantum Electronics 51, 9, 2015.

20. Z. Li, L Jiu, Y. P. Gong, Liancheng Wang, Yun Zhang, J. Bai, T. Wang, Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: simultaneous management of crystal quality improvement and cracking issue, Appl. Phys. Lett. 110, 082103 (2017).

19. Z. Li, Liancheng Wang, L Jiu, Jochen Bruckbauer, Y. P. Gong , Y.Zhang, J. Bai, Robert W. Martin, T. Wang, Optical Investigation of Semi-polar (11-22) AlxGa1-xN with High Al Composition, Appl. Phys. Lett.110, 091102 (2017).

18. Mahsa Jalali, Liancheng Wang, Y Yu, JKW Yang et. al., Generating colors from 3D plasmonic superlattice, Nanoscale, 8 (42), 18228-18234, 2016. A 3-tiered complex superlattice of metal nanostructures exhibit drastic color changes when sequentially exfoliated.

17. Q. Wang, J. Ma, T. Zhan, Liancheng Wang, E. Guo, Z. Liu, X. Yi, J. Wang, G. Wang, and J. Li, Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes, IEEE Photonics Journal, 8, 4, 2016, 1601108. Electroless Silver Plating for VLEDs.

16. J. Ma, Liancheng Wang (Joint first author), Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi, G. Wang, J. Li, Hexagonal Pyramids Shaped GaN Light Emitting Diodes Array by N-polar Wet Etching, MRS Proceedings, Vol. 1538, 2013.

15. Y. Cheng, Liancheng Wang, Y. Zhang, H. Zheng, J. Ma, X. Yi*, G. Wang and J. Li, Enhanced Light Output Power of GaN-based Light Emitting Diodes with Micro-nano-patterned Sapphire Substrate, ECS Solid State Letters, 2 (11) Q93-Q97 (2013)

14. C. Du*, H. Zheng, T. Wei*, K.Wu, Y. Zhang, Liancheng Wang, C. Geng, Q. Yan, J. Wang, J. Li, Photonic Crystal Light-Emitting Diodes with Nano-Pyramids Selectively Grown on p-GaN, Optics Express, 21, 21, 25373(2013). DOI:10.1364/OE.21.025373. Nanosphere Lithography for pattern substrate.

13. Y. Zhang, Liancheng Wang, X. Li, X. Yi, N. Zhang, J. Li, H. Zhu*, and G. Wang. Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes. J. Appl. Phys., 2012, 111 (11): 114501. (Most cited paper for JAP 2013). Graphene TCEs Annealing.

12. Y. Zhang, X. Li, Liancheng Wang, X. Yi, D. Wu, H. Zhu*, and G. Wang. Enhanced light emission of GaN-based diodes with NiOx/graphene hybrid electrodes. Nanoscale, 2012, 4 (19): 5852-5855. Graphene hybrid TCEs.

11. Y. Zhang, H. Zheng, E. Guo, Y. Cheng, J. Ma, Liancheng Wang, Z. Liu, X. Yi*, G. Wang, J. Li, Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes, J. Appl. Phys.113,014502 (2013). Extraction efficiency and efficiency droop investigation for LEDs.

10. Z. Liu, T. Wei, E. Guo, X.Yi, Liancheng Wang, J. Wang, G.Wang, Y. Shi, J. Li, Efficiency Droop in InGaN/GaN Multiple-quantum-well Blue Light-Emitting Diodes Grown on Free-standing GaN Substrate, Appl. Phys. Lett. 99, 091104 (2011). Efficiency droopinvestigation for LEDs.

9. Z. Liu, J. Ma, X. Yi, E. Guo, Liancheng Wang, J. Wang, N. Lu, J. Li, Ian T. Ferguson , A. Melton, p-InGaN/AlGaN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes, Appl. Phys. Lett. 101, 261106 (2012). Electron Blocking Layer Design for LEDs.

8. Z. Li, J. Kang, Z. liu, C. Du, X. Lee, X. Li, Liancheng Wang, X. Yi, G. Wang, Enhanced Performance of GaN-based Light-emitting Diodes with Graphene/Ag Nanowires Hybrid Films, AIP Advances, 3, 042134 (2013). Graphene/Ag Nanowires Hybrid TCEs.

7. Z. Li, J. Kang, Z. Liu*, Liancheng Wang, X. Lee, X. Li, X. Yi, H. Zhu*, G. Wang, The fabrication of GaN-based nanorods light-emitting diodes with multilayer graphene transparent electrodes, J. Appl. Phys. 113, 234302 (2013). Graphene TCEs for NanoLEDs.

6. Z-H. Zhang, W. Liu, Z. Ju, ST. Tan, Y. Ji, Z. Kyaw, X. Zhang, Liancheng Wang, X. Wei Sun,* and H. V. Demir*, InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition to suppress the Auger recombination, Appl. Phys. Lett. 105, 033506 (2014). Epitaxial Design for LEDs: a grading InN.

5. Z-H. Zhang, W.Liu, Z. Ju, ST. Tan, Y. Ji, Zabu Kyaw, X. Zhang, Liancheng Wang, X. W. Sun,* and H. V. Demir*, Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers, Appl. Phys. Lett.104, 243501 (2014). Epitaxial Design for LEDs: Self-screeningof QCSE.

4. Z-H. Zhang, W. Liu, Z. Ju, ST. Tan, Y. Ji, Zabu Kyaw, X. Zhang, Liancheng Wang, X. W. Sun,* and H. V. Demir*, Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency, Appl. Phys. Lett. 104, 251108 (2014). Epitaxial Design for LEDs: Polarization self-screening.

3. Z-H. Zhang, W. Liu, ST. Tan, Y. Ji, Liancheng Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. Sun, A hole accelerator for InGaN/GaN light-emitting diodes, Appl. Phys. Lett. 105, 153503 (2014). Epitaxial Design for LEDs: A hole accelerator.

2. Z-H. Zhang, Z. Kyaw, W. Liu, Y. Ji, Liancheng Wang, ST. Tan, X.W. Sun, H. V. Demir,A hole modulator for InGaN/GaN light-emitting diodes,Appl. Phys. Lett. 106, 063501 (2015). Epitaxial Design for LEDs: A hole modulator.

1. Y. P. Zhang, Z-H. Zhang, W.Liu, ST. Tan, Z. G. Ju, X. Zhang, Y. Ji, Liancheng Wang, Z. Kyaw, N. Hasanov, B. Zhu, S. Lu, X. Sun, and H. V. Demir*,Nonradiative recombination-critical in choosing quantum well number for InGaN/GaN light-emitting diodes,Optics Express23 (3), A34-A42,2015.Epitaxial Design for LEDs: quantum well number optimization.

专利申请

1. 汪炼成;郭恩卿;刘志强;伊晓燕;王国宏, 氮化镓基垂直结构发光二极管转移衬底的二次电镀方法。申请号:201010251510.8,授权号: CN101974772B.

2. 汪炼成;郭恩卿;刘志强;伊晓燕;王国宏,氮化镓基垂直结构发光二极管转移衬底的腐蚀方法。申请号:201010251509.5, 授权号: CN101937951B.

3. 刘志强, 郭恩卿, 伊晓燕, 汪炼成, 王国宏, 李晋闽, 栅极调制垂直结构GaN基发光二极管的器件结构及制备方法。授权号:CN102064261B.

4. 刘志强, 郭恩卿, 伊晓燕, 汪炼成, 王国宏, 李晋闽,栅极调制正装结构GaN基发光二极管的器件结构及制备方法。授权号:CN102064260B.

5. 詹腾, 汪炼成,郭恩卿,刘志强,伊晓燕,王国宏等,氮化镓基垂直结构发光二极管隐形电极的制作方法。申请号:201110152869.4. 授权号:CN102208502B.

6. 孙波;伊晓燕;刘志强;汪炼成;郭恩卿;王国宏, 自支撑氮化镓衬底的制作方法。申请号:201110134149.5.授权号:CN102208340B.

7. 程滟,汪炼成,刘志强,伊晓燕,王国宏, 制作纳米级柱形阵列氮化镓基正装结构发光二极管的方法。申请号:201210436128.3. 授权号:CN 102956774 B

8. 汪炼成,马骏;刘志强;伊晓燕;王国宏, 利用热应力化学腐蚀分离蓝宝石和氮化镓基外延层的方法。申请号: 201210208501.X.

9. 汪炼成,马骏;刘志强;伊晓燕;王国宏, 制作微纳金字塔氮化镓基垂直结构发光二极管阵列的方法。申请号: 201210208853.5.

10. 汪炼成,郭恩卿;谢海忠;伊晓燕;王国宏, 晶圆级垂直结构发光二极管封装的方法。 申请号:201210043833.7.

11. 程滟, 汪炼成,刘志强,伊晓燕,王国宏, 制作柔性金字塔阵列GaN基半导体发光二极管的方法。申请号: 201210513689.9.

12. 马骏, 汪炼成, 张逸韵,伊晓燕, 王国宏,应用石墨烯薄膜作为载流子注入层的垂直结构发光二极管。申请号:201210217051.0.

13. 马骏,汪炼成,张逸韵,伊晓燕,王国宏,应用石墨烯薄膜作为载流子注入层的发光二极管。申请号:201210217242.7.

14. 郭恩卿;刘志强;汪炼成;伊晓燕;王莉;王国宏,氮化镓基垂直结构发光二极管桥联电极制备方法,申请号:201010251507.6.

15. 谢海忠;汪炼成;张逸韵;杨华;李璟;伊晓燕;王国宏;李晋闽,晶圆级LED管芯整体集成封装装置,申请号:201210126306.2.

16. 郭恩卿;伊晓燕;汪炼成;孙波;王国宏,氮化镓基发光二极管电流阻挡层的制作方法,申请号:20110152904.2.

17. 张逸韵;汪炼成;郭恩卿;孙波;伊晓燕;王国宏,应用石墨烯薄膜电流扩展层的氮化镓基垂直结构LED,申请号:201110147591.1.

18. 郭恩卿;刘志强;汪炼成;伊晓燕;王莉;王国宏,氮化镓基垂直结构发光二极管电极结构的制作方法,申请号: 201010251508.0.

中国实用新型专利 (均已授权)

1. 一种无线控制的自由移动音乐LED彩虹灯。申请号:201520489299.1. 彭效冉,赵辉,张逸韵,汪炼成,宋亮,刘玉蕾,谢海忠

2. 一种柔性叠层基板LED封装体,申请号:201520510403.0. 彭效冉,赵辉,张逸韵,汪炼成,宋亮,刘玉蕾,谢海忠

3. 深紫外LED杀菌消毒机器人,申请号:201520489298.7彭效冉,赵辉,张逸韵,汪炼成,宋亮,刘玉蕾,谢海忠

4. 一种全彩氮化镓基LED芯片立式封装体, 申请号:201520489338.8. 彭效冉,赵辉,张逸韵,汪炼成,宋亮,刘玉蕾,谢海忠

5. 一种深紫外LED鞋垫消毒器,申请号:201520489336.9. 彭效冉,赵辉,张逸韵,汪炼成,宋亮,刘玉蕾,谢海忠

6. 一种基于可见光通信的调光调色温系统,申请号:201520489300.0. 彭效冉,赵辉,张逸韵,汪炼成,宋亮,刘玉蕾,谢海忠

荣誉奖励

中国科学院大学国家奖学金(博士) 2012,(19/500)

中国科学院半导体研究所所长奖,2013 (38/500)

中国科学院半导体所三好学生(2012) (10/500)

中国科学院半导体所五四青年交流三等奖(2011)

半导体所研究生学术委员会学生委员(2012, 2013)

中南大学优秀本科毕业生(2008)

中国人民大学第六届创业之星特等奖, 05.2014

中国创新创业大赛,北京赛区前十, 08.2014.

“首届大学生创业”十强(央广网), 10.2014.

首届众创杯中国北京创新创业大赛三等奖,08.2015

第二届全国互联网+大赛北京地区一等奖

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