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  ɣУϣйѧԺѧйѧԺ뵼оѧʿϴѧƸڣʿʦ 
  ȺпԺ뵼о, ¼ѧ¼¿Ƽѧ¼¹ѧӢлƶ´ѧ²ʿͲʿо֮ǿƼӿƼ˾Ĵʼ˺ϯѧңзΪ뵼ϵͳ򷢹⡢ɫʡͼʾӦõĵLED 죬뼤ԪɫʴӡͶӰʾϵͳ͵н10Ŀо, 863ƻ, ί¼¹һ(NRF)Ӣѧо»Ŀ(EPSRC)ȶĿ
  ڹѧڿ,ACS Photonics, Nano Energy, Appl. Phys. Lett.ȷѧ60 ƪNature Materials Review ڿ,ôԼ500 Σר24 Ȩר13 ĿǰIEEE Աڿ, Nanoscale, Nano Energy ȵˡαҵýCompound Semiconductor, Semiconductor Today
  
ü07.2017-ֽ   Ƹڣʿʦϴѧ繤ѧԺ
ü01.2016-07.2017  ʿоԱ, Ӣлƶ´ѧ, EPSRC ӢIII-V뵼з              
ü04.2015-12.2015   ʿоѧ¼¿Ƽƴѧо,¼¿Ƽ-ʡѧԺ, ¼¹ѧȽά&ʯīϩз
ü07.2013-04.2015 ʿоԱ¼ѧӹϵ׿Խ뵼巢ʾ
ü09.2008-07.2013 ʿ, йѧԺѧйѧԺ뵼ойѧԺ뵼
ü09.2004–07.2008    ѧʿ, ϴѧϿѧ빤ѧԺ
оȤо
1.   ΢켼װ; 2. ΢ɹѧ͹ϵͳ͹ʾϵͳ; 3. 뵼壨III-) ; 4.ﴫӭ׿Ƽ΢ϵͳ΢ӹʾ繦ȷȤͬѧ룬רҵΪѧ̣΢ӣѧѧе̣ϵȡڶඥϵ, ѧл͹опԺ뵼廪ѧ¼¿ƼѧԼҵ繫˾, ȻᣬΪͬѧṩĹʼЧ, ߳ȡŬõĹͿ, ȡ
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liancheng_wang@csu.edu.cn; wanglc@semi.ac.cn. 
칫ңϴѧУ繤ѧԺ (Ƽ¥) A-510.
18008497660.
΢ţ 271949769.
 

2017 
45S. T. Wu, Liancheng Wang, X. Y. Yi, Z. Q. Liu, T. B. Wei, G. D.Yuan, J. X. Wang, J. M. Li, Ultrafast Growth of Horizontal GaN Nanowires by HVPE through Flipping the Substrate, Nano Letters. 2017.
44S. T. Wu, Liancheng Wang, X. Y. Yi, Z. Q. Liu, T. B. Wei, G. D.Yuan, J. X. Wang, J. M. Li, Influence of lateral growth on optical properties of GaN nanowires  grown by VLS-HVPE, J. Appl.Phys. 2017.
43. Liancheng Wang*, Y. Y. Zhang,  R. Chen, Z. Q. Liu, J. Ma, Z. Li, X. Y. Yi, H. J. Li, J. X. Wang, G. H. Wang, W. H. Zhu, J. M.Li, Optically-pumped lasing with Q-factor exceeding 6000 from Wet-etched GaN Micro-pyramids, Opt. Lett., 2017, 42, 15, 2976.
42. Liancheng Wang, Z.Li, Z.Liu, Y.Zhang, H.Li, X.Yi, J.Wang, G.Wang, J.Li, Nanostructure Nitride Light Emitting Diodes via Talbot Effect using Improved Colloidal Photolithography, Nanoscale, 2017, 9, 7021.
41Y. Y Zhang, P. Li, A. Dehzangi, Liancheng Wang, H. Li, X.Yi and G. WangOptically-pumped Single-mode Deep-ultraviolet Microdisk Lasers with AlGaN-based Multiple Quantum Wells on Si Substrate, IEEE Photonics Journal (accepted). 
Before 2017
40. Liancheng Wang, RJH Ng, S Safari Dinachali, M Jalali, Y Yu, JKW Yang*, Large Area Plasmonic Color Palettes with Expanded Gamut Using Colloidal Self-Assembly, ACS Photonics 3 (4), 627-633, 2016. Plasmonic color via Nanosphere lithography. 
39. Liancheng Wang, Z Liu, X Yi, Y Zhang, H Li, J Li, G Wang, Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic-electric Fano resonances, J. Appl. Phys. 119 (17), 173106, 2016. Plasmonic Modes Theoretical Analysis. 
38. Liancheng Wang*, Z Liu, ZH Zhang, YD Tian, X Yi, J Wang, J Li, G Wang, Interface and photoluminescence characteristics of graphene-(GaN/InGaN)multiple quantum wells hybrid structure, J. Appl.Phys.119(14), 143105, 2016. Graphene-(GaN/InGaN)n Interface Analysis. 
37. Liancheng Wang*, Y. Cheng, Z. Liu, X. Yi, H. Zhu, G. Wang, Hybrid tunnel junction-graphene transparent conductive electrodes for nitride lateral light Emitting Diodes, ACS Applied Materials & Interface, 2016, 8, 1176−1183. DOI: 10.1021/acsami.5b09419. Graphene transparent conductive electrodes for LEDs. 
36. Liancheng Wang*, E. Guo, Z. Liu, X. Yi, G. Wang, High Performance Nitride Vertical Light Emitting Diodes based on Cu Electroplating Technical route, IEEE Transaction on Electron Devices, 63, 3, 2016. 10.1109/TED.2016.2520393. Vertical structure LEDs Fabrication. 
35. Liancheng Wang*, Z-H. Zhang, N. Wang, Current crowding phenomenon: Theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model, IEEE J. Quantum Electronics, 51, 5(2015). Current Diffusion Analysis.  
34. Liancheng Wang, W. Liu, Y. Zhang, Z-H. Zhang, S.T.Tan, X. Yi, G. Wang*, X. Sun*, H. Zhu*, H.V. Demir*, Graphene transparent conductive electrodes in GaN-based light emitting diodes: Challenges and Countermeasures, Nano Energy (2015) 12, 419–436. Graphene Transparent Conductive Electrodes in GaN LEDs review. 
33. Liancheng Wang, Y. Zhang, X. Li, Z. Liu, E. Guo, X. Yi, J. Wang, H. Zhu*, G. Wang, Partially-sandwiched Multi-layer Graphene used as Transparent Conductive Layer for InGaN-based Vertical Light Emitting Diodes, Appl. Phys. Lett. 101, 061102 (2012).covered by Semiconductor Today(27 August 2012) Graphene Transparent Conductive Electrodes for VLEDs. 
32. Liancheng Wang, J. Ma, Z. Liu, X. Yi*, H. Zhu*, G. Wang, In-situ fabrication of bendable hexagonal pyramids array vertical light emitting diodes with graphene as interconnected transparent conductive layer. ACS Photonics 2014, 1, 421−429. Bendable VLEDs Fabrication. 
31. Liancheng Wang*, Z. Liu, E. Guo, H. Yang, X. Yi*, G. Wang, Interface and transport properties of metallization contacts to wet etching roughed and un-roughed N-polar n-type GaN, ACS Applied Materials & Interfaces 2013, 5 (12), 5797-803. Metal/N-polar GaN contact investigation for VLEDs.  
30. Liancheng Wang, Y. Zhang, X. Li, Z. Liu, E. Guo, X. Yi, J. Wang, H. Zhu* G.Wang, Interface and transport properties of GaN/graphene junction InGaN-based LEDs, J. Phys. D: Appl. Phys. 45 (2012) 505102. GaN/graphene Contact. 
29. Liancheng Wang, Y. Zhang, X. Li, E. Guo, Z. Liu, X. Yi*, H. Zhu*, G. Wang, Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping, RSC Adv., 2013, 3, 3359. GaN/graphene Contact. 
28. Liancheng Wang, Y. Zhang, X. Li, E. Guo, Z. Liu, X. Yi*, H. Zhu*,G. Wang, InGaN-based vertical light emitting diodes with HNO3 modified-graphene transparent conductive layer and high reflective membrane current blocking layer, Proc. R. Soc. A 469: 20120652 (2013). Graphene TCEs for VLEDs. 
27. Liancheng Wang*, Z. Liu, Y. Zhang, H. Zheng,H. Xie, H. Yang, X. Yi*, G.Wang, Mechanism in Thermal Stress aided Electrodeless Etching of GaN Epitaxial on Sapphire and approaches to vertical devices, RSC Adv., 2013,3, 10934-10943. Chemical etching for sapphire removal towards VLEDs. 
26. Liancheng Wang*, J. Ma, Z. Liu, X. Yi*, G. Wang, N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array. J. Appl. Phys. 2013, 10, 114 (133101). N-polar GaN chemical etching towards micro VLEDs. 
25. Liancheng Wang, J. Ma (Joint first author), Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi*, G. Wang, J. Li, Hexagonal Pyramids Array micro vertical Light Emitting Diodes by N-polar Wet Etching, Optics Express, 21, 3, 3457 (2013). MicroVLEDs Fabrication. 
24. T. Tian, Liancheng Wang*, T. Zhan, J. Guo, X. Yi*, Z. Liu, J. Li, and G. Wang, Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%), J. Phys. D Appl. Phys. 47 (2014)115102.
23. Liancheng Wang*, G. Enqing, Liu. Zhiqiang, Yi Xiaoyan, Wang Guohong. Electrical characteristics of vertical light emitting diode with n-type contact on a selectively wet-etching roughed surface. J. Semiconductors. vol.32, no.2 (2011). 
22. B.Xu, L.Jiu, Y. Gong, Y.Zhang, Liancheng Wang, J.Bai, T.Wang, Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire, AIP Advances, 7 (4), 045009, 2017. 
21. P. Li, H. Li*, Liancheng Wang, Z. H. Zhang, J. Kang, Z. Li, Z. Q. Liu, X. Yi, J. Li, G. Wang, High efficiency and low droop of 400 nm InGaN near-ultraviolet light-emitting diodes through suppressed leakage current, IEEE J. Quantum Electronics 51, 9, 2015.
20. Z. Li, L Jiu, Y. P. Gong, Liancheng Wang, Yun Zhang, J. Bai, T. Wang, Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: simultaneous management of crystal quality improvement and cracking issue, Appl. Phys. Lett. 110, 082103 (2017). 
19. Z. Li, Liancheng Wang, L Jiu, Jochen Bruckbauer, Y. P. Gong , Y.Zhang, J. Bai, Robert W. Martin, T. Wang, Optical Investigation of Semi-polar (11-22) AlxGa1-xN with High Al Composition, Appl. Phys. Lett.110, 091102 (2017). 
18. Mahsa Jalali, Liancheng Wang, Y Yu, JKW Yang et. al., Generating colors from 3D plasmonic superlattice, Nanoscale, 8 (42), 18228-18234, 2016. A 3-tiered complex superlattice of metal nanostructures exhibit drastic color changes when sequentially exfoliated.
17. Q. Wang, J. Ma, T. Zhan, Liancheng Wang, E. Guo, Z. Liu, X. Yi, J. Wang, G. Wang, and J. Li, Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes, IEEE Photonics Journal, 8, 4, 2016, 1601108. Electroless Silver Plating for VLEDs.
16. J. Ma, Liancheng Wang (Joint first author), Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi, G. Wang, J. Li, Hexagonal Pyramids Shaped GaN Light Emitting Diodes Array by N-polar Wet Etching, MRS Proceedings, Vol. 1538, 2013.
15. Y. Cheng, Liancheng Wang, Y. Zhang, H. Zheng, J. Ma, X. Yi*, G. Wang and J. Li, Enhanced Light Output Power of GaN-based Light Emitting Diodes with Micro-nano-patterned Sapphire Substrate, ECS Solid State Letters, 2 (11) Q93-Q97 (2013)
14. C. Du*, H. Zheng, T. Wei*, K.Wu, Y. Zhang, Liancheng Wang, C. Geng, Q. Yan, J. Wang, J. Li, Photonic Crystal Light-Emitting Diodes with Nano-Pyramids Selectively Grown on p-GaN, Optics Express, 21, 21, 25373(2013). DOI:10.1364/OE.21.025373. Nanosphere Lithography for pattern substrate.
13. Y. Zhang, Liancheng Wang, X. Li, X. Yi, N. Zhang, J. Li, H. Zhu*, and G. Wang. Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes. J. Appl. Phys., 2012, 111 (11): 114501. (Most cited paper for JAP 2013). Graphene TCEs Annealing. 
12. Y. Zhang, X. Li, Liancheng Wang, X. Yi, D. Wu, H. Zhu*, and G. Wang. Enhanced light emission of GaN-based diodes with NiOx/graphene hybrid electrodes. Nanoscale, 2012, 4 (19): 5852-5855. Graphene hybrid TCEs.
11. Y. Zhang, H. Zheng, E. Guo, Y. Cheng, J. Ma, Liancheng Wang, Z. Liu, X. Yi*, G. Wang, J. Li, Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes, J. Appl. Phys.113,014502 (2013). Extraction efficiency and efficiency droop investigation for LEDs.
10. Z. Liu, T. Wei, E. Guo, X.Yi, Liancheng Wang, J. Wang, G.Wang, Y. Shi, J. Li, Efficiency Droop in InGaN/GaN Multiple-quantum-well Blue Light-Emitting Diodes Grown on Free-standing GaN Substrate, Appl. Phys. Lett. 99, 091104 (2011). Efficiency droopinvestigation for LEDs.
9. Z. Liu, J. Ma, X. Yi, E. Guo, Liancheng Wang, J. Wang, N. Lu, J. Li, Ian T. Ferguson , A. Melton, p-InGaN/AlGaN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes, Appl. Phys. Lett. 101, 261106 (2012). Electron Blocking Layer Design for LEDs. 
8. Z. Li, J. Kang, Z. liu, C. Du, X. Lee, X. Li, Liancheng Wang, X. Yi, G. Wang, Enhanced Performance of GaN-based Light-emitting Diodes with Graphene/Ag Nanowires Hybrid Films, AIP Advances, 3, 042134 (2013). Graphene/Ag Nanowires Hybrid TCEs. 
7. Z. Li, J. Kang, Z. Liu*, Liancheng Wang, X. Lee, X. Li, X. Yi, H. Zhu*, G. Wang, The fabrication of GaN-based nanorods light-emitting diodes with multilayer graphene transparent electrodes, J. Appl. Phys. 113, 234302 (2013). Graphene TCEs for NanoLEDs. 
6. Z-H. Zhang, W. Liu, Z. Ju, ST. Tan, Y. Ji, Z. Kyaw, X. Zhang, Liancheng Wang, X. Wei Sun,* and H. V. Demir*, InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition to suppress the Auger recombination, Appl. Phys. Lett. 105, 033506 (2014). Epitaxial Design for LEDs: a grading InN.
5. Z-H. Zhang, W.Liu, Z. Ju, ST. Tan, Y. Ji, Zabu Kyaw, X. Zhang, Liancheng Wang, X. W. Sun,* and H. V. Demir*, Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers, Appl. Phys. Lett.104, 243501 (2014). Epitaxial Design for LEDs: Self-screeningof QCSE. 
4. Z-H. Zhang, W. Liu, Z. Ju, ST. Tan, Y. Ji, Zabu Kyaw, X. Zhang, Liancheng Wang, X. W. Sun,* and H. V. Demir*, Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency, Appl. Phys. Lett. 104, 251108 (2014). Epitaxial Design for LEDs: Polarization self-screening. 
3. Z-H. Zhang, W. Liu, ST. Tan, Y. Ji, Liancheng Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. Sun, A hole accelerator for InGaN/GaN light-emitting diodes, Appl. Phys. Lett. 105, 153503 (2014). Epitaxial Design for LEDs: A hole accelerator.
2. Z-H. Zhang, Z. Kyaw, W. Liu, Y. Ji, Liancheng Wang, ST. Tan, X.W. Sun, H. V. Demir,A hole modulator for InGaN/GaN light-emitting diodes,Appl. Phys. Lett. 106, 063501 (2015). Epitaxial Design for LEDs: A hole modulator.
1. Y. P. Zhang, Z-H. Zhang, W.Liu, ST. Tan, Z. G. Ju, X. Zhang, Y. Ji, Liancheng Wang, Z. Kyaw, N. Hasanov, B. Zhu, S. Lu, X. Sun, and H. V. Demir*,Nonradiative recombination-critical in choosing quantum well number for InGaN/GaN light-emitting diodes,Optics Express23 (3), A34-A42,2015.Epitaxial Design for LEDs: quantum well number optimization. 
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йѧԺѧҽѧ(ʿ) 2012,(19/500)
йѧԺ뵼о2013 (38/500)
йѧԺ뵼ѧ(2012) (10/500)
йѧԺ뵼꽻Ƚ(2011)
뵼оѧίԱѧίԱ(2012, 2013)
ϴѧ㱾Ʊҵ(2008)
йѧ촴ҵ֮صȽ, 05.2014
й´ҵǰʮ, 08.2014.
“׽ѧҵ”ʮǿ, 10.2014.
׽ڴй´ҵȽ,08.2015
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